- 专利标题： Method of manufacturing a semiconductor device including removing a relief layer from back surface of semiconductor chip
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申请号： US14715928申请日： 2015-05-19
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公开(公告)号： US09646856B2公开(公告)日： 2017-05-09
- 发明人: Thorsten Meyer , Klaus Reingruber , David O'Sullivan
- 申请人： Intel Mobile Communications GmbH
- 申请人地址： DE Neubiberg
- 专利权人： Intel Deutschland GmbH
- 当前专利权人： Intel Deutschland GmbH
- 当前专利权人地址： DE Neubiberg
- 代理机构： Eschweiler & Potashnik, LLC
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L21/304 ; H01L21/56 ; H01L23/31 ; H01L23/00 ; H01L21/311 ; H01L21/683 ; H01L21/78
摘要：
A method of manufacturing a device includes providing a semiconductor chip having a first face and a second face opposite to the first face with a contact pad arranged on the first face. The semiconductor chip is placed on a carrier with the first face facing the carrier. The semiconductor chip is encapsulated with an encapsulation material. The carrier is removed and the semiconductor material is removed from the second face of the first semiconductor chip without removing encapsulation material at the same time.
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