Invention Grant
- Patent Title: Heating plate with heating zones for substrate processing and method of use thereof
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Application No.: US14056604Application Date: 2013-10-17
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Publication No.: US09646861B2Publication Date: 2017-05-09
- Inventor: Harmeet Singh , Keith Gaff , Neil Benjamin , Keith Comendant
- Applicant: Lam Research Corporation
- Applicant Address: US CA Fremont
- Assignee: LAM RESEARCH CORPORATION
- Current Assignee: LAM RESEARCH CORPORATION
- Current Assignee Address: US CA Fremont
- Main IPC: H05B1/02
- IPC: H05B1/02 ; H01L21/67 ; C23C14/54 ; C23C16/458 ; H01L21/683 ; H01L21/3065 ; H05B3/26 ; H05B3/00 ; C23C14/50 ; C23C16/46 ; C23C16/509 ; H01J37/32 ; H01L21/02 ; H01L21/285 ; H01L21/311 ; H01L21/3213
Abstract:
A heating plate for use in a substrate support is configured to provide temperature profile control of a substrate supported on the substrate support in a vacuum chamber of a substrate processing apparatus. The heating plate includes an independently controllable heater zones operable to tune a temperature profile on an upper surface of the heating plate. The heater zones are each powered by two or more power lines wherein each power line is electrically connected to a different group of the heater zones and each respective heater zone is electrically connected to a different pair of power lines.
Public/Granted literature
- US20140045337A1 HEATING PLATE WITH PLANAR HEATER ZONES FOR SEMICONDUCTOR PROCESSING Public/Granted day:2014-02-13
Information query
