Invention Grant
- Patent Title: Chemoepitaxy etch trim using a self aligned hard mask for metal line to via
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Application No.: US14738284Application Date: 2015-06-12
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Publication No.: US09646883B2Publication Date: 2017-05-09
- Inventor: Markus Brink , Michael A. Guillorn , Chung-Hsun Lin , HsinYu Tsai
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Louis J. Percello
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L21/768 ; H01L21/02 ; H01L21/311 ; H01L23/528 ; H01L23/522 ; H01L23/532

Abstract:
A method of forming metal lines that are aligned to underlying metal features that includes forming a neutral layer atop a hardmask layer that is overlying a dielectric layer. The neutral layer is composed of a neutral charged di-block polymer. Patterning the neutral layer, the hardmask layer and the dielectric layer to provide openings that are filled with a metal material to provide metal features. A self-assembled di-block copolymer material is deposited on a patterned surface of the neutral layer and the metal features. The self-assembled di-block copolymer material includes a first block composition with a first affinity for alignment to the metal features. The first block composition of the self-assembled di-block copolymer is converted to a metal that is self-aligned to the metal features.
Public/Granted literature
- US20160365280A1 CHEMOEPITAXY ETCH TRIM USING A SELF ALIGNED HARD MASK FOR METAL LINE TO VIA Public/Granted day:2016-12-15
Information query
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