Invention Grant
- Patent Title: Method and apparatus for reducing radiation induced change in semiconductor structures
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Application No.: US15075094Application Date: 2016-03-18
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Publication No.: US09646893B2Publication Date: 2017-05-09
- Inventor: Gary E. Dickerson , Seng (victor) Keong Lim , Samer Banna , Gregory Kirk , Mehdi Vaez-Iravani
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson + Sheridan, LLP
- Main IPC: H01L21/67
- IPC: H01L21/67 ; H01L21/66 ; H01L21/324 ; H01L21/027 ; H01L21/683
Abstract:
Embodiments of the present disclosure relate to an apparatus and a method for reducing the adverse effects of exposing portions of an integrated circuit (IC) device to various forms of radiation during one or more operations found within the IC formation processing sequence by controlling the environment surrounding and temperature of an IC device during one or more parts of the IC formation processing sequence. The provided energy may include the delivery of radiation to a surface of a formed or a partially formed IC device during a deposition, etching, inspection or post-processing process operation. In some embodiments of the disclosure, the temperature of the substrate on which the IC device is formed is controlled to a temperature that is below room temperature (e.g.,
Public/Granted literature
- US20160276227A1 METHOD AND APPARATUS FOR REDUCING RADIATION INDUCED CHANGE IN SEMICONDUCTOR STRUCTURES Public/Granted day:2016-09-22
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