公开(公告)号：US20240035967A1

公开(公告)日：2024-02-01

申请号：US18361586

申请日：2023-07-28

Applicant: Applied Materials, Inc.

Inventor： Joseph R. Johnson ,  Ang Li ,  Jean Marc Fan Chung Tsang Min Ching ,  Mehdi Vaez-Iravani

IPC: G01N21/47

CPC classification number: G01N21/4795

Abstract: An imaging system for capturing spatial-omic images of biological tissue samples may include an imaging chamber configured to secure a biological tissue sample placed in the imaging system; a Time Delay and Integration (TDI) imager comprising at least one scan line; a light source configured to illuminate an area on the biological tissue sample that is being captured by the TDI imager; and a controller configured to cause the TDI imager to scan the biological tissue sample using one or more TDI scans of the biological tissue sample.

公开(公告)号：US20230169643A1

公开(公告)日：2023-06-01

申请号：US18070114

申请日：2022-11-28

Applicant: Applied Materials, Inc.

Inventor： Mehdi Vaez-Iravani ,  Todd J. Egan

IPC: G06T7/00 ,  G01B21/08 ,  B25J9/16 ,  G06T7/60

CPC classification number: G06T7/001 ,  G01B21/08 ,  B25J9/1697 ,  G06T7/60 ,  G06T2207/10152 ,  G06T2207/30148

Abstract: Implementations disclosed describe a method of obtaining a first image of a sample using a first light, wherein the sample has been subjected to a processing operation associated with a change of a thickness of the sample. The method further includes weighing the sample to obtain a first mass of the sample. The method further includes determining, based at least in part on the first image of the sample and the first mass of the sample, one or more properties of the sample, such as the change of a thickness of the sample, a change of an refractive index of the sample, and/or a change of an optical density of the sample a distribution of the change of the thickness of the sample.

公开(公告)号：US20210302330A1

公开(公告)日：2021-09-30

申请号：US16831575

申请日：2020-03-26

Applicant: Applied Materials, Inc.

Inventor： Guoheng Zhao ,  Mehdi Vaez-Iravani

IPC: G01N21/956 ,  G01N21/95

Abstract: Methods for performing imaging reflectometry measurements include illuminating a measurement area on a sample using an input beam having a first peak wavelength, and obtaining multiple images of the measurement area using portions of the input beam reflected from the sample. A reflectance intensity value is determined for each of a plurality of pixels in each of the images. A parameter associated with the particular structure is determined using the reflectance intensity value.

公开(公告)号：US11119051B2

公开(公告)日：2021-09-14

申请号：US17062231

申请日：2020-10-02

Applicant: Applied Materials, Inc.

Inventor： Todd Egan ,  Mehdi Vaez-Iravani ,  Samer Banna ,  Kyle Tantiwong ,  Gregory Kirk ,  Abraham Ravid ,  Yaoming Shen

IPC: G01N21/00 ,  G01N21/95 ,  H01L21/67 ,  G01N15/02 ,  G01N15/14 ,  G01N21/94

Abstract: A system for processing a substrate is provided. The system includes a process chamber including one or more sidewalls enclosing a processing region; and a substrate support. The system further includes a passageway connected to the process chamber; and a first particle detector disposed at a first location along the passageway. The first particle detector includes an energy source configured to emit a first beam; one or more optical devices configured to direct the first beam along one or more paths, where the one or more paths extend through at least a portion of the passageway. The first particle detector further includes a first energy detector disposed at a location other than on the one or more paths. The system further includes a controller configured to communicate with the first particle detector, wherein the controller is configured to identify a fault based on signals received from the first particle detector.

公开(公告)号：US10816464B2

公开(公告)日：2020-10-27

申请号：US16295173

申请日：2019-03-07

Applicant: APPLIED MATERIALS, INC.

Inventor： Guoheng Zhao ,  Mehdi Vaez-Iravani ,  Todd J. Egan

IPC: G01N21/55

Abstract: An imaging reflectometer includes a source module configured to generate a plurality of input beams at different nominal wavelengths. An illumination pupil having a first numerical aperture (NA) is arranged so that each of the plurality of input beams passes through the illumination pupil. A large field lens is configured to receive at least a portion of each of the plurality of input beams and provide substantially telecentric illumination over a sample being imaged. The large field lens is also configured to receive reflected portions of the substantially telecentric illumination reflected from the sample. The reflected portions pass through an imaging pupil having a second NA that is lower than the first NA and are received by an imaging sensor module that generates image information.

公开(公告)号：US12211717B2

公开(公告)日：2025-01-28

申请号：US17216203

申请日：2021-03-29

Applicant: Applied Materials, Inc.

Inventor： Eric Chin Hong Ng ,  Edward Wibowo Budiarto ,  Mehdi Vaez-Iravani ,  Todd Jonathan Egan ,  Venkatakaushik Voleti

IPC: H01L21/67 ,  G01B11/06 ,  G06N5/04 ,  G06N20/00

Abstract: A method includes identifying first structure data of a first region of a substrate and receiving optical metrology data of the substrate associated with one or more substrate deposition processes in a processing chamber. The method further includes determining, based on the optical metrology data and the first structure data, a first growth rate of the first region of the substrate associated with the one or more substrate deposition processes. The method further includes predicting, based on the optical metrology data and the first growth rate, thickness data of a second region of the substrate without second structure data of the second region.

公开(公告)号：US20250012560A1

公开(公告)日：2025-01-09

申请号：US18586090

申请日：2024-02-23

Applicant: Applied Materials, Inc.

Inventor： Venkatakaushik Voleti ,  Mehdi Vaez-Iravani

IPC: G01B11/06 ,  H01L21/67

Abstract: Disclosed systems and techniques are directed to interferometry-based sample thickness metrology in manufacturing systems. For example, the disclosed techniques include directing a focused beam to a plurality of locations of a sample and detecting an interference pattern (IP) associated with a light departing from the respective location and generated upon interaction of the focused beam with the sample. The techniques further include determining, based on a first IP associated with a first light departing from a first location and a second IP associated with a second light departing from a second location, a magnitude and a sign of a difference between a first thickness of the sample at the first location and a second thickness of the sample at the second location.

公开(公告)号：US20240304430A1

公开(公告)日：2024-09-12

申请号：US18666251

申请日：2024-05-16

Applicant: Applied Materials, Inc.

Inventor： Mehdi Vaez-Iravani ,  Todd J. Egan ,  Kyle Ross Tantiwong

IPC: H01J37/32 ,  C23C14/34 ,  C23C14/54 ,  C23C16/44 ,  C23C16/52 ,  G01N21/01 ,  H01J37/34

CPC classification number: H01J37/32972 ,  C23C14/34 ,  C23C14/54 ,  C23C16/4401 ,  C23C16/52 ,  G01N21/01 ,  H01J37/32477 ,  H01J37/3476 ,  H01J2237/3321

Abstract: Implementations disclosed describe a system that includes a deposition chamber, a light source to produce an incident beam of light, wherein the incident beam of light is to illuminate a region of the deposition chamber, and a camera to collect a scattered light originating from the illuminated region of the deposition chamber, wherein the scattered light is to be produced upon interaction of the first incident beam of light with particles inside the illuminated region of the deposition chamber. The described system may optionally have a processing device, coupled to the camera, to generate scattering data for a plurality of locations of the illuminated region, wherein the scattering data for each location comprises intensity of the scattered light originating from this location.

公开(公告)号：US20240110782A1

公开(公告)日：2024-04-04

申请号：US17936608

申请日：2022-09-29

Applicant: APPLIED MATERIALS, INC.

Inventor： Eric Chin Hong Ng ,  Todd J. Egan ,  Mehdi Vaez-Iravani

IPC: G01B11/30 ,  G01J5/00 ,  G01J5/0806 ,  G01J5/0808

CPC classification number: G01B11/303 ,  G01J5/0003 ,  G01J5/0806 ,  G01J5/0808

Abstract: A system includes a radiation source configured to emit a radiation beam. The system further includes a first optical sensor configured to detect a first intensity of a first portion of the radiation beam reflected from a surface of an object. The system further includes a second optical sensor configured to detect a second intensity of a second portion of the radiation beam scattered by the surface of the object. The system further includes a processing device communicatively coupled to the first optical sensor and the second optical sensor. The processing device is configured to determine at least one of a roughness or an emissivity of the surface of the object based on a comparison of the first intensity and the second intensity.

公开(公告)号：US11908716B2

公开(公告)日：2024-02-20

申请号：US17321366

申请日：2021-05-14

Applicant: Applied Materials, Inc.

Inventor： Guoheng Zhao ,  Venkatakaushik Voleti ,  Todd Egan ,  Kyle R. Tantiwong ,  Andreas Schulze ,  Niranjan Ramchandra Khasgiwale ,  Mehdi Vaez-Iravani

IPC: H01L21/67 ,  C23C16/52 ,  G01N21/55 ,  H01L21/66

CPC classification number: H01L21/67253 ,  C23C16/52 ,  G01N21/55 ,  H01L21/67069 ,  H01L22/12

Abstract: Methods and systems for monitoring etch or deposition processes using image-based in-situ process monitoring techniques include illuminating a measurement area on a sample disposed in a process chamber. The measurement area is illuminated using an input beam generated remote from the process chamber and transmitted to a first viewing window of the process chamber by a first optical fiber. Portions of the first input beam reflected from the measurement area are transmitted from the first viewing window to an imaging sensor by a second optical fiber. A sequence of images is obtained at the imaging sensor, and a change in reflectance of pixels within each of the images is determined. The etch or deposition process is monitored based on the change in reflectance.