Invention Grant
- Patent Title: Semiconductor-substrate manufacturing method and semiconductor-device manufacturing method in which germanium layer is heat-treated
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Application No.: US15031437Application Date: 2014-10-10
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Publication No.: US09647074B2Publication Date: 2017-05-09
- Inventor: Akira Toriumi , Choong-hyun Lee , Tomonori Nishimura
- Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY
- Applicant Address: JP Kawaguchi-Shi
- Assignee: JAPAN SCIENCE AND TECHNOLOGY AGENCY
- Current Assignee: JAPAN SCIENCE AND TECHNOLOGY AGENCY
- Current Assignee Address: JP Kawaguchi-Shi
- Priority: JP2013-227559 20131031
- International Application: PCT/JP2014/077135 WO 20141010
- International Announcement: WO2015/064338 WO 20150507
- Main IPC: H01L29/36
- IPC: H01L29/36 ; H01L21/28 ; H01L21/322 ; H01L21/324 ; H01L29/16 ; H01L29/78 ; H01L29/51
Abstract:
A method of manufacturing a semiconductor substrate includes: heat-treating a germanium layer 30 with an oxygen concentration of 1×1016 cm−3 or greater in a reducing gas atmosphere at 700° C. or greater. Alternatively, a method of manufacturing a semiconductor substrate includes heat-treating a germanium layer 30 having an oxygen concentration of 1×1016 cm−3 or greater in a reducing gas atmosphere so that the oxygen concentration decreases.
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