发明授权
- 专利标题: Memory device, memory system, and control method performed by the memory system
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申请号: US14163519申请日: 2014-01-24
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公开(公告)号: US09652180B2公开(公告)日: 2017-05-16
- 发明人: Youn-Won Park , Su-Ryun Lee , Byung-Ki Lee , Sang-Cheol Lee
- 申请人: Youn-Won Park , Su-Ryun Lee , Byung-Ki Lee , Sang-Cheol Lee
- 申请人地址: KR Gyeonggi-Do
- 专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址: KR Gyeonggi-Do
- 代理机构: Harness, Dickey & Pierce, P.L.C.
- 优先权: KR10-2013-0009508 20130128
- 主分类号: G06F12/00
- IPC分类号: G06F12/00 ; G06F3/06 ; G11C16/10 ; G11C11/56 ; G11C16/34
摘要:
Provided are a memory device, a memory system, and a control method performed by the memory system. The control method includes operations of generating, by a first function block of the memory system, a main request comprising a first sub-request for a first operation that is requested by an external source and a second sub-request for a second operation that is dependent upon a processing result of the first operation; processing, by a second function block of the memory system, the first sub-request or the second sub-request; and when a processing result of the first sub-request performed by the second function block is a fail, transmitting, by a third function block of the memory system, abortion information to the first function block in response to the main request, regardless of processing the second sub-request.
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