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公开(公告)号：US09652180B2
公开(公告)日：2017-05-16
申请号：US14163519
申请日：2014-01-24
申请人： Youn-Won Park , Su-Ryun Lee , Byung-Ki Lee , Sang-Cheol Lee
发明人： Youn-Won Park , Su-Ryun Lee , Byung-Ki Lee , Sang-Cheol Lee
CPC分类号： G06F3/0679 , G11C11/5628 , G11C16/10 , G11C16/344
摘要： Provided are a memory device, a memory system, and a control method performed by the memory system. The control method includes operations of generating, by a first function block of the memory system, a main request comprising a first sub-request for a first operation that is requested by an external source and a second sub-request for a second operation that is dependent upon a processing result of the first operation; processing, by a second function block of the memory system, the first sub-request or the second sub-request; and when a processing result of the first sub-request performed by the second function block is a fail, transmitting, by a third function block of the memory system, abortion information to the first function block in response to the main request, regardless of processing the second sub-request.
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公开(公告)号：US08127071B2
公开(公告)日：2012-02-28
申请号：US12202177
申请日：2008-08-29
申请人： Min-Young Kim , Song-Ho Yoon , Su-Ryun Lee
发明人： Min-Young Kim , Song-Ho Yoon , Su-Ryun Lee
CPC分类号： G11C29/808
摘要： A semiconductor memory device includes adjacent planes and a control module. The adjacent planes include a reserve field and a data field having multiple blocks. The blocks of each of the reserve and data fields are successively arranged over the adjacent planes to form a multi-plane operation group. The control module is configured to control the adjacent planes to conduct a first operation or a second operation in accordance with whether the reserve field includes free blocks corresponding to a unit of the multi-plane operation group. The first operation includes replacing blocks of the data field with free blocks of the reserve field in the unit of the multi-plane operation group. The second operation includes replacing one block of the data field with one free block of the reserve field.
摘要翻译： 半导体存储器件包括相邻平面和控制模块。 相邻平面包括备用字段和具有多个块的数据字段。 每个保留区和数据区的块依次排列在相邻平面上，形成多平面操作组。 所述控制模块被配置为根据所述保留区域是否包括与所述多平面操作组的单元相对应的空闲块来控制相邻平面进行第一操作或第二操作。 第一操作包括以多平面操作组为单位的备用字段的空闲块替换数据字段的块。 第二个操作包括用备用字段的一个空闲块替换数据字段的一个块。
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公开(公告)号：US07843732B2
公开(公告)日：2010-11-30
申请号：US12201476
申请日：2008-08-29
申请人： Su-Ryun Lee , Song-Ho Yoon
发明人： Su-Ryun Lee , Song-Ho Yoon
CPC分类号： G11C16/10 , G06F11/1072 , G11C11/5628 , G11C16/04 , G11C29/00 , G11C29/74 , G11C2029/0409 , G11C2029/0411 , G11C2211/5641 , G11C2211/5647
摘要： Methods of operating a non-volatile multi-bit memory device can include programming multi-bit memory cells included in one page of the device with page data including an error detection code based on the page data and determining the validity of the page data using the error detection code read from the multi-bit memory cells in response to an error during programming of the multi-bit memory cells, wherein the multi-bit memory cells in the one page are configured to store a single bit of the page data.
摘要翻译： 操作非易失性多位存储器件的方法可以包括编程包括在设备的一页中的多位存储器单元，其中页面数据包括基于页数据的错误检测代码，并使用该页数据确定页数据的有效性 响应于在多位存储器单元的编程期间的错误从多位存储器单元读取的错误检测码，其中一页中的多位存储器单元被配置为存储页面数据的单个位。
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4.发明申请公开(公告)号：US20090073762A1
公开(公告)日：2009-03-19
申请号：US12201476
申请日：2008-08-29
申请人： Su-Ryun Lee , Song-Ho Yoon
发明人： Su-Ryun Lee , Song-Ho Yoon
CPC分类号： G11C16/10 , G06F11/1072 , G11C11/5628 , G11C16/04 , G11C29/00 , G11C29/74 , G11C2029/0409 , G11C2029/0411 , G11C2211/5641 , G11C2211/5647
摘要： Methods of operating a non-volatile multi-bit memory device can include programming multi-bit memory cells included in one page of the device with page data including an error detection code based on the page data and determining the validity of the page data using the error detection code read from the multi-bit memory cells in response to an error during programming of the multi-bit memory cells, wherein the multi-bit memory cells in the one page are configured to store a single bit of the page data.
摘要翻译： 操作非易失性多位存储器件的方法可以包括编程包括在设备的一页中的多位存储器单元，其中页面数据包括基于页数据的错误检测代码，并使用该页数据确定页数据的有效性 响应于在多位存储器单元的编程期间的错误从多位存储器单元读取的错误检测码，其中一页中的多位存储器单元被配置为存储页面数据的单个位。
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