- 专利标题： Method for manufacturing nanowire transistor device
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申请号： US15378015申请日： 2016-12-13
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公开(公告)号： US09653290B2公开(公告)日： 2017-05-16
- 发明人: Li-Wei Feng , Shih-Hung Tsai , Shih-Fang Hong , Chao-Hung Lin , Jyh-Shyang Jenq
- 申请人： UNITED MICROELECTRONICS CORP.
- 申请人地址： TW Hsin-Chu
- 专利权人： UNITED MICROELECTRONICS CORP.
- 当前专利权人： UNITED MICROELECTRONICS CORP.
- 当前专利权人地址： TW Hsin-Chu
- 代理商 Winston Hsu; Scott Margo
- 优先权： CN201510037261 20150126
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; H01L27/12 ; H01L21/02 ; H01L29/06
摘要：
A method for manufacturing a nanowire transistor device includes the following steps: A substrate is provided, and the substrate includes a plurality of nanowires suspended thereon. Each of the nanowires includes a first semiconductor core. Next, a first selective epitaxial growth process is performed to form second semiconductor cores respectively surrounding the first semiconductor cores. The second semiconductor cores are spaced apart from the substrate. After forming the second semiconductor core, a gate is formed on the substrate.
公开/授权文献
- US20170092737A1 METHOD FOR MANUFACTURING NANOWIRE TRANSISTOR DEVICE 公开/授权日：2017-03-30
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