Methods of forming fine patterns and methods of manufacturing integrated circuit devices using the methods

Invention Grant

US09653294B2 Methods of forming fine patterns and methods of manufacturing integrated circuit devices using the methods 有权

Please log in to see more content

Patent Title: Methods of forming fine patterns and methods of manufacturing integrated circuit devices using the methods
Application No.: US14957777

Application Date: 2015-12-03
Publication No.: US09653294B2

Publication Date: 2017-05-16
Inventor: Eun-sung Kim , Dae-yong Kang , Seung-chul Kwon , Shi-yong Yi
Applicant: Samsung Electronics Co., Ltd.
Applicant Address: KR
Assignee: Samsung Electronics Co., Ltd.
Current Assignee: Samsung Electronics Co., Ltd.
Current Assignee Address: KR
Agency: Ward and Smith, P.A.
Priority: KR10-2014-0172373 20141203
Main IPC: H01L21/302
IPC: H01L21/302 ; H01L21/033 ; H01L21/308 ; H01L21/311 ; H01L21/3213 ; H01L27/108

Methods of forming fine patterns and methods of manufacturing integrated circuit devices using the methods

Abstract:

The present inventive concept provides a method of forming a fine pattern including forming a plurality of pillar-shaped guides that are regularly arranged on a feature layer.

Public/Granted literature

US20160163547A1 METHODS OF FORMING FINE PATTERNS AND METHODS OF MANUFACTURING INTEGRATED CIRCUIT DEVICES USING THE METHODS Public/Granted day:2016-06-09

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/302	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割