Invention Grant
- Patent Title: Semiconductor device and method of fabricating the same
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Application No.: US15057130Application Date: 2016-03-01
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Publication No.: US09653460B1Publication Date: 2017-05-16
- Inventor: Shin-Hung Li , Kuan-Chuan Chen , Nien-Chung Li , Wen-Fang Lee , Chih-Chung Wang
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Priority: CN201510974251 20151223
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L29/49 ; H01L27/02 ; H01L29/423 ; H01L21/8234 ; H01L21/28 ; H01L29/45 ; H01L21/3105 ; H01L29/66

Abstract:
A semiconductor device and a method of fabricating the same, the semiconductor device includes a substrate, a first gate and a second gate. The first gate is disposed on the substrate and includes a first gate insulating layer, a polysilicon layer, a silicide layer and a protective layer stacked with each other on the substrate and a first spacer surrounds the first gate insulating layer, the polysilicon layer, the silicide layer and the protective layer. The second gate is disposed on the substrate and includes a second gate insulating layer, a work function metal layer and a conductive layer stacked with each other on the substrate, and a second spacer surrounds the second gate insulating layer, the work function metal layer and the conductive layer.
Information query
IPC分类: