Invention Grant
- Patent Title: Semiconductor device and electronic device
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Application No.: US15072076Application Date: 2016-03-16
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Publication No.: US09653479B2Publication Date: 2017-05-16
- Inventor: Hidekazu Miyairi , Yuichi Sato , Yuji Asano , Tetsunori Maruyama , Tatsuya Onuki , Shuhei Nagatsuka
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2015-055720 20150319; JP2015-083272 20150415
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L29/78 ; H01L27/12 ; H01L29/786 ; H01L23/528 ; H01L23/522 ; H01L23/532 ; H01L29/16

Abstract:
To provide a semiconductor device with excellent electrical characteristics or a semiconductor device with stable electrical characteristics. A semiconductor device includes a first transistor, a second transistor, a first insulator, a second insulator, a first wiring, and a first plug. The first transistor includes silicon. The second transistor includes an oxide semiconductor. The first insulator is located over the first transistor. The second insulator is located over the first insulator. The second transistor is located over the second insulator. The first wiring is located over the second insulator and the first plug. The first transistor and the second transistor are electrically connected to each other through the first wiring and the first plug. The first wiring has low hydrogen permeability. The hydrogen permeability of the second insulator is lower than the hydrogen permeability of the first insulator.
Public/Granted literature
- US20160276370A1 SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE Public/Granted day:2016-09-22
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