公开(公告)号：US10889888B2

公开(公告)日：2021-01-12

申请号：US15189104

申请日：2016-06-22

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki ,  Tetsunori Maruyama ,  Yuki Imoto ,  Hitomi Sato ,  Masahiro Watanabe ,  Mitsuo Mashiyama ,  Kenichi Okazaki ,  Motoki Nakashima ,  Takashi Shimazu

IPC分类号： C23C14/08 ,  C23C14/34 ,  C23C14/54 ,  C04B35/01 ,  C04B35/453 ,  C04B35/64 ,  B28B11/24 ,  H01L21/02 ,  H01L29/24 ,  H01L29/66 ,  H01L29/786

摘要： There have been cases where transistors formed using oxide semiconductors are inferior in reliability to transistors formed using amorphous silicon. Thus, in the present invention, a semiconductor device including a highly reliable transistor formed using an oxide semiconductor is manufactured. An oxide semiconductor film is deposited by a sputtering method, using a sputtering target including an oxide semiconductor having crystallinity, and in which the direction of the c-axis of a crystal is parallel to a normal vector of the top surface of the oxide semiconductor. The target is formed by mixing raw materials so that its composition ratio can obtain a crystal structure.

公开(公告)号：US10804409B2

公开(公告)日：2020-10-13

申请号：US16158478

申请日：2018-10-12

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Junichiro Sakata ,  Tetsunori Maruyama ,  Yuki Imoto

IPC分类号： H01L29/12 ,  H01L29/786 ,  H01L27/12 ,  H01L29/24

摘要： Many of the physical properties of a silicon semiconductor have already been understood, whereas many of the physical properties of an oxide semiconductor have been still unclear. In particular, an adverse effect of an impurity on an oxide semiconductor has been still unclear. In view of the above, a structure is disclosed in which an impurity that influences electrical characteristics of a semiconductor device including an oxide semiconductor layer is prevented or is eliminated. A semiconductor device which includes a gate electrode, an oxide semiconductor layer, and a gate insulating layer provided between the gate electrode and the oxide semiconductor layer and in which the nitrogen concentration in the oxide semiconductor layer is 1×1020 atoms/cm3 or less is provided.

公开(公告)号：US10388520B2

公开(公告)日：2019-08-20

申请号：US14580566

申请日：2014-12-23

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki ,  Akihisa Shimomura ,  Yuhei Sato ,  Yasumasa Yamane ,  Yoshinori Yamada ,  Tetsunori Maruyama

IPC分类号： C23C14/34 ,  H01L21/02 ,  C23C14/08 ,  C23C14/35 ,  H01L29/66 ,  H01L29/786

摘要： A method of forming an oxide semiconductor includes a step of depositing an oxide semiconductor layer over a substrate by using a sputtering apparatus in which in a target containing indium, an element M (aluminum, gallium, yttrium, or tin), zinc, and oxygen, the substrate which faces a surface of the target, and a magnet unit comprising a first magnet and a second magnet on a rear surface side of the target are provided. In the method, deposition is performed under a condition that a maximum intensity of a horizontal magnetic field is greater than or equal to 350 G and less than or equal to 2000 G in a plane where a vertical distance toward the substrate from a surface of the magnet unit is 10 mm.

公开(公告)号：US09530872B2

公开(公告)日：2016-12-27

申请号：US14146093

申请日：2014-01-02

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Akiharu Miyanaga ,  Masayuki Sakakura ,  Junichi Koezuka ,  Tetsunori Maruyama ,  Yuki Imoto

IPC分类号： H01L29/66 ,  H01L21/02 ,  H01L27/12 ,  H01L29/786

CPC分类号： H01L29/66969 ,  H01L21/02565 ,  H01L27/1225 ,  H01L29/7869

摘要： An object is to provide a thin film transistor and a method for manufacturing the thin film transistor including an oxide semiconductor with a controlled threshold voltage, high operation speed, a relatively easy manufacturing process, and sufficient reliability. An impurity having influence on carrier concentration in the oxide semiconductor layer, such as a hydrogen atom or a compound containing a hydrogen atom such as H2O, may be eliminated. An oxide insulating layer containing a large number of defects such as dangling bonds may be formed in contact with the oxide semiconductor layer, such that the impurity diffuses into the oxide insulating layer and the impurity concentration in the oxide semiconductor layer is reduced. The oxide semiconductor layer or the oxide insulating layer in contact with the oxide semiconductor layer may be formed in a deposition chamber which is evacuated with use of a cryopump whereby the impurity concentration is reduced.

公开(公告)号：US09224838B2

公开(公告)日：2015-12-29

申请号：US14260461

申请日：2014-04-24

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Akiharu Miyanaga ,  Masayuki Sakakura ,  Junichi Koezuka ,  Tetsunori Maruyama ,  Yuki Imoto

IPC分类号： H01L21/00 ,  H01L21/16 ,  H01L29/66 ,  C23C14/08 ,  H01L21/02 ,  H01L29/786

CPC分类号： H01L29/66742 ,  C23C14/086 ,  H01L21/02422 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/7869

摘要： An object is to provide an oxide semiconductor having stable electric characteristics and a semiconductor device including the oxide semiconductor. A manufacturing method of a semiconductor film by a sputtering method includes the steps of holding a substrate in a treatment chamber which is kept in a reduced-pressure state; heating the substrate at lower than 400° C.; introducing a sputtering gas from which hydrogen and moisture are removed in the state where remaining moisture in the treatment chamber is removed; and forming an oxide semiconductor film over the substrate with use of a metal oxide which is provided in the treatment chamber as a target. When the oxide semiconductor film is formed, remaining moisture in a reaction atmosphere is removed; thus, the concentration of hydrogen and the concentration of hydride in the oxide semiconductor film can be reduced. Thus, the oxide semiconductor film can be stabilized.

摘要翻译： 目的是提供具有稳定电特性的氧化物半导体和包括氧化物半导体的半导体器件。 通过溅射法制造半导体膜的方法包括将基板保持在保持在减压状态的处理室中的步骤; 在低于400℃下加热基材。 在去除处理室中的剩余水分的状态下引入除去氢气和水分的溅射气体; 以及使用设置在处理室中的金属氧化物作为目标，在基板上形成氧化物半导体膜。 当形成氧化物半导体膜时，除去反应气氛中的剩余水分; 因此，可以降低氧化物半导体膜中的氢浓度和氢化物浓度。 因此，可以使氧化物半导体膜稳定。

公开(公告)号：US20150187575A1

公开(公告)日：2015-07-02

申请号：US14580566

申请日：2014-12-23

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki ,  Akihisa Shimomura ,  Yuhei Sato ,  Yasumasa Yamane ,  Yoshinori Yamada ,  Tetsunori Maruyama

IPC分类号： H01L21/02 ,  C23C14/35 ,  C23C14/34

CPC分类号： H01L21/02631 ,  C23C14/08 ,  C23C14/086 ,  C23C14/3414 ,  C23C14/35 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02595 ,  H01L21/02598 ,  H01L21/0262 ,  H01L29/66969 ,  H01L29/7869

摘要： A method of forming an oxide semiconductor includes a step of depositing an oxide semiconductor layer over a substrate by using a sputtering apparatus in which in a target containing indium, an element M (aluminum, gallium, yttrium, or tin), zinc, and oxygen, the substrate which faces a surface of the target, and a magnet unit comprising a first magnet and a second magnet on a rear surface side of the target are provided. In the method, deposition is performed under a condition that a maximum intensity of a horizontal magnetic field is greater than or equal to 350 G and less than or equal to 2000 G in a plane where a vertical distance toward the substrate from a surface of the magnet unit is 10 mm.

摘要翻译： 形成氧化物半导体的方法包括通过使用溅射装置在衬底上沉积氧化物半导体层的步骤，其中在含有铟的元素M（铝，镓，钇或锡），锌和氧元素 设置面向靶的表面的基板，以及在靶的背面侧具有第一磁体和第二磁体的磁体单元。 在该方法中，在水平磁场的最大强度大于或等于350G且小于或等于2000G的条件下，在从基板的表面垂直距离的平面中进行沉积 磁体单位为10 mm。

公开(公告)号：US11959165B2

公开(公告)日：2024-04-16

申请号：US17228847

申请日：2021-04-13

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Shunpei Yamazaki ,  Tetsunori Maruyama ,  Yuki Imoto ,  Hitomi Sato ,  Masahiro Watanabe ,  Mitsuo Mashiyama ,  Kenichi Okazaki ,  Motoki Nakashima ,  Takashi Shimazu

IPC分类号： C23C14/34 ,  B28B11/24 ,  C04B35/453 ,  C04B35/64 ,  C23C14/08 ,  H01L21/02 ,  H01L29/24 ,  H01L29/66 ,  H01L29/786

CPC分类号： C23C14/3414 ,  B28B11/243 ,  C04B35/453 ,  C04B35/64 ,  C23C14/08 ,  C23C14/086 ,  C23C14/345 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/76

摘要： There have been cases where transistors formed using oxide semiconductors are inferior in reliability to transistors formed using amorphous silicon. Thus, in the present invention, a semiconductor device including a highly reliable transistor formed using an oxide semiconductor is manufactured. An oxide semiconductor film is deposited by a sputtering method, using a sputtering target including an oxide semiconductor having crystallinity, and in which the direction of the c-axis of a crystal is parallel to a normal vector of the top surface of the oxide semiconductor. The target is formed by mixing raw materials so that its composition ratio can obtain a crystal structure.

公开(公告)号：US11387116B2

公开(公告)日：2022-07-12

申请号：US16806211

申请日：2020-03-02

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki ,  Yuhei Sato ,  Keiji Sato ,  Tetsunori Maruyama ,  Junichi Koezuka

IPC分类号： H01L21/324 ,  H01L21/336 ,  H01L29/786 ,  H01L21/40 ,  H01L27/12 ,  H01L21/02 ,  H01L29/66 ,  H01L21/383 ,  H01L21/477

摘要： In a manufacturing process of a transistor including an oxide semiconductor film, oxygen doping treatment is performed on the oxide semiconductor film, and then heat treatment is performed on the oxide semiconductor film and an aluminum oxide film provided over the oxide semiconductor film. Consequently, an oxide semiconductor film which includes a region containing more oxygen than a stoichiometric composition is formed. The transistor formed using the oxide semiconductor film can have high reliability because the amount of change in the threshold voltage of the transistor by a bias-temperature stress test (BT test) is reduced.

公开(公告)号：US11066739B2

公开(公告)日：2021-07-20

申请号：US16285297

申请日：2019-02-26

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Shunpei Yamazaki ,  Tetsunori Maruyama ,  Yuki Imoto ,  Hitomi Sato ,  Masahiro Watanabe ,  Mitsuo Mashiyama ,  Kenichi Okazaki ,  Motoki Nakashima ,  Takashi Shimazu

IPC分类号： H01L21/02 ,  H01L29/24 ,  H01L29/66 ,  H01L29/786 ,  C23C14/34 ,  B28B11/24 ,  C04B35/64 ,  C04B35/453 ,  C23C14/08

摘要： There have been cases where transistors formed using oxide semiconductors are inferior in reliability to transistors formed using amorphous silicon. Thus, in the present invention, a semiconductor device including a highly reliable transistor formed using an oxide semiconductor is manufactured. An oxide semiconductor film is deposited by a sputtering method, using a sputtering target including an oxide semiconductor having crystallinity, and in which the direction of the c-axis of a crystal is parallel to a normal vector of the top surface of the oxide semiconductor. The target is formed by mixing raw materials so that its composition ratio can obtain a crystal structure.

公开(公告)号：US09653479B2

公开(公告)日：2017-05-16

申请号：US15072076

申请日：2016-03-16

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Hidekazu Miyairi ,  Yuichi Sato ,  Yuji Asano ,  Tetsunori Maruyama ,  Tatsuya Onuki ,  Shuhei Nagatsuka

IPC分类号： H01L21/00 ,  H01L29/78 ,  H01L27/12 ,  H01L29/786 ,  H01L23/528 ,  H01L23/522 ,  H01L23/532 ,  H01L29/16

CPC分类号： H01L27/1225 ,  H01L21/76807 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76885 ,  H01L21/8258 ,  H01L23/481 ,  H01L23/485 ,  H01L23/5223 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53238 ,  H01L23/53257 ,  H01L23/53295 ,  H01L27/0688 ,  H01L27/088 ,  H01L27/1207 ,  H01L27/124 ,  H01L27/1255 ,  H01L29/16 ,  H01L29/45 ,  H01L29/78 ,  H01L29/78603 ,  H01L29/7869 ,  H01L29/78696

摘要： To provide a semiconductor device with excellent electrical characteristics or a semiconductor device with stable electrical characteristics. A semiconductor device includes a first transistor, a second transistor, a first insulator, a second insulator, a first wiring, and a first plug. The first transistor includes silicon. The second transistor includes an oxide semiconductor. The first insulator is located over the first transistor. The second insulator is located over the first insulator. The second transistor is located over the second insulator. The first wiring is located over the second insulator and the first plug. The first transistor and the second transistor are electrically connected to each other through the first wiring and the first plug. The first wiring has low hydrogen permeability. The hydrogen permeability of the second insulator is lower than the hydrogen permeability of the first insulator.