- Patent Title: System and method for semiconductor wafer inspection and metrology
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Application No.: US14990233Application Date: 2016-01-07
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Publication No.: US09658150B2Publication Date: 2017-05-23
- Inventor: Shifang Li , Youxian Wen
- Applicant: KLA-TENCOR CORPORATION
- Applicant Address: US CA Milpitas
- Assignee: KLA-Tencor Corporation
- Current Assignee: KLA-Tencor Corporation
- Current Assignee Address: US CA Milpitas
- Agency: Hodgson Russ LLP
- Main IPC: G01N21/21
- IPC: G01N21/21 ; G01B11/02 ; G03F7/20 ; G01B11/30 ; G01N21/95 ; G01B11/06 ; G01N21/39 ; G01N21/88

Abstract:
A system determines a value, such as a thickness, surface roughness, material concentration, and/or critical dimension, of a layer on a wafer based on normalized signals and reflected total intensities. A light source directs a beam at a surface of the wafer. A sensor receives the reflected beam and provides at least a pair of polarization channels. The signals from the polarization channels are received by a controller, which normalizes a difference between a pair of the signals to generate the normalized result. The value of the wafer is determined through analyzing the signal with a modeling of the system.
Public/Granted literature
- US20160202177A1 SYSTEM AND METHOD FOR SEMICONDUCTOR WAFER INSPECTION AND METROLOGY Public/Granted day:2016-07-14
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