System and method for semiconductor wafer inspection and metrology
Abstract:
A system determines a value, such as a thickness, surface roughness, material concentration, and/or critical dimension, of a layer on a wafer based on normalized signals and reflected total intensities. A light source directs a beam at a surface of the wafer. A sensor receives the reflected beam and provides at least a pair of polarization channels. The signals from the polarization channels are received by a controller, which normalizes a difference between a pair of the signals to generate the normalized result. The value of the wafer is determined through analyzing the signal with a modeling of the system.
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