Invention Grant
- Patent Title: Process for stabilizing a bonding interface, located within a structure which comprises an oxide layer and structure obtained
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Application No.: US14362208Application Date: 2012-12-13
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Publication No.: US09659777B2Publication Date: 2017-05-23
- Inventor: Didier Landru , Carole David , Ionut Radu , Lucianna Capello , Yann Sinquin
- Applicant: Soitec
- Applicant Address: FR Bernin
- Assignee: Soitec
- Current Assignee: Soitec
- Current Assignee Address: FR Bernin
- Agency: TraskBritt
- Priority: FR1161527 20111213
- International Application: PCT/IB2012/002698 WO 20121213
- International Announcement: WO2013/088226 WO 20130620
- Main IPC: H01L21/428
- IPC: H01L21/428 ; H01L21/268 ; H01L21/02 ; H01L21/20 ; H01L21/324

Abstract:
The invention relates to a process for stabilizing a bonding interface, located within a structure for applications in the fields of electronics, optics and/or optoelectronics and that comprises an oxide layer buried between an active layer and a receiver substrate, the bonding interface having been obtained by molecular adhesion. In accordance with the invention, the process further comprises irradiating this structure with a light energy flux provided by a laser, so that the flux, directed toward the structure, is absorbed by the energy conversion layer and converted to heat in this layer, and in that this heat diffuses into the structure toward the bonding interface, so as to thus stabilize the bonding interface.
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