公开(公告)号：US09659777B2

公开(公告)日：2017-05-23

申请号：US14362208

申请日：2012-12-13

Applicant: Soitec

Inventor： Didier Landru ,  Carole David ,  Ionut Radu ,  Lucianna Capello ,  Yann Sinquin

IPC: H01L21/428 ,  H01L21/268 ,  H01L21/02 ,  H01L21/20 ,  H01L21/324

CPC classification number: H01L21/268 ,  H01L21/02354 ,  H01L21/2007 ,  H01L21/324 ,  H01L21/428

Abstract: The invention relates to a process for stabilizing a bonding interface, located within a structure for applications in the fields of electronics, optics and/or optoelectronics and that comprises an oxide layer buried between an active layer and a receiver substrate, the bonding interface having been obtained by molecular adhesion. In accordance with the invention, the process further comprises irradiating this structure with a light energy flux provided by a laser, so that the flux, directed toward the structure, is absorbed by the energy conversion layer and converted to heat in this layer, and in that this heat diffuses into the structure toward the bonding interface, so as to thus stabilize the bonding interface.

公开(公告)号：US20140357093A1

公开(公告)日：2014-12-04

申请号：US14362208

申请日：2012-12-13

Applicant: Soitec

Inventor： Didier Landru ,  Carole David ,  Ionut Radu ,  Lucianna Capello ,  Yann Sinquin

IPC: H01L21/268 ,  H01L21/324

CPC classification number: H01L21/268 ,  H01L21/02354 ,  H01L21/2007 ,  H01L21/324 ,  H01L21/428

Abstract: The invention relates to a process for stabilizing a bonding interface, located within a structure for applications in the fields of electronics, optics and/or optoelectronics and that comprises an oxide layer buried between an active layer and a receiver substrate, the bonding interface having been obtained by molecular adhesion. In accordance with the invention, the process further comprises irradiating this structure with a light energy flux provided by a laser, so that the flux, directed toward the structure, is absorbed by the energy conversion layer and converted to heat in this layer, and in that this heat diffuses into the structure toward the bonding interface, so as to thus stabilize the bonding interface.

Abstract translation: 本发明涉及一种用于稳定接合界面的方法，该接合界面位于用于电子学，光学和/或光电子学领域的结构内，并且包括掩埋在有源层和接收器衬底之间的氧化物层，所述接合界面已被 通过分子粘附获得。 根据本发明，该方法还包括用激光提供的光能通量照射该结构，使得朝向结构的通量被能量转换层吸收并在该层中被转换成热 这种热量向结合界面扩散到结构中，从而稳定接合界面。