Invention Grant
- Patent Title: Vertical light emitting diode and fabrication method
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Application No.: US14588001Application Date: 2014-12-31
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Publication No.: US09666757B2Publication Date: 2017-05-30
- Inventor: Xiaoqiang Zeng , Chih-Wei Chao , Shunping Chen , Jianjian Yang , Daquan Lin
- Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Applicant Address: CN Xiamen
- Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee Address: CN Xiamen
- Agency: Syncoda LLC
- Agent Feng Ma; Junjie Feng
- Priority: CN201210355335 20120924
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L33/14 ; H01L33/36 ; H01L33/20 ; H01L33/38

Abstract:
A vertical LED with current blocking structure and its associated fabrication method involve an anisotropic conductive material and a conductive substrate with concave-convex structure. The anisotropic conductive material forms a bonding layer with vertical conduction and horizontal insulation between the concave-convex substrate and the light-emitting epitaxial layer, thereby forming a vertical LED with current blocking function.
Public/Granted literature
- US20150108534A1 VERTICAL LIGHT EMITTING DIODE AND FABRICATION METHOD Public/Granted day:2015-04-23
Information query
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