Invention Grant
- Patent Title: TFD I/O partition for high-speed, high-density applications
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Application No.: US15148726Application Date: 2016-05-06
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Publication No.: US09679613B1Publication Date: 2017-06-13
- Inventor: Zhuowen Sun , Kyong-Mo Bang , Belgacem Haba , Wael Zohni
- Applicant: Invensas Corporation
- Applicant Address: US CA San Jose
- Assignee: Invensas Corporation
- Current Assignee: Invensas Corporation
- Current Assignee Address: US CA San Jose
- Agency: Lerner, David, Littenberg, Krumholz & Mentlik, LLP
- Main IPC: G11C5/06
- IPC: G11C5/06 ; G11C8/00 ; G11C5/02 ; H01L25/065 ; G11C11/408

Abstract:
A microelectronic package can include a substrate having first and second surfaces, first, second, and third microelectronic elements each having a surface facing the first surface, terminals exposed at the second surface, and leads electrically connected between contacts of each microelectronic element and the terminals. The substrate can have first, second, and third spaced-apart apertures having first, second, and third parallel axes extending in directions of the lengths of the apertures. The contacts of the first, second, and third microelectronic elements can be aligned with one of the first, second, or third apertures. The terminals can include first and second sets of first terminals configured to carry address information. The first set can be connected with the first and third microelectronic elements and not with the second microelectronic element, and the second set can be connected with the second microelectronic element and not with the first or third microelectronic elements.
Public/Granted literature
- US1643690A Stitched buffing section Public/Granted day:1927-09-27
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