Invention Grant
- Patent Title: Semiconductor device manufacturing method and semiconductor device manufacturing apparatus
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Application No.: US14619616Application Date: 2015-02-11
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Publication No.: US09679770B2Publication Date: 2017-06-13
- Inventor: Hidetami Yaegashi
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Rothwell, Figg, Ernst & Manbeck, P.C.
- Priority: JP2014-030238 20140220
- Main IPC: C03C15/00
- IPC: C03C15/00 ; C03C25/68 ; C23F1/00 ; B44C1/22 ; H01L21/033 ; H01L21/67
Abstract:
A semiconductor device manufacturing method of the present invention includes forming a base film having a water-repellent surface on a substrate; forming a photosensitive film having a water-repellent surface on the base film; developing the photosensitive film to expose the base film, thereby forming a photosensitive film pattern; supplying a first spacer material on the photosensitive film and on the exposed base film; and removing at least a part of the first spacer material formed on a top surface of the photosensitive film and a top surface of the base film.
Public/Granted literature
- US20150235850A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING APPARATUS Public/Granted day:2015-08-20
Information query
