Invention Grant
- Patent Title: Method for removing crystal originated particles from a crystalline silicon body
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Application No.: US14217913Application Date: 2014-03-18
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Publication No.: US09679774B2Publication Date: 2017-06-13
- Inventor: Hans-Joachim Schulze , Peter Irsigler
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: H01L21/225
- IPC: H01L21/225 ; H01L21/324 ; H01L21/311 ; H01L21/02 ; H01L21/26 ; H01L21/265 ; H01L21/268 ; H01L21/306 ; H01L21/322 ; H01L21/263 ; H01L29/06
Abstract:
A method for removing crystal originated particles from a crystalline silicon body having opposite first and second surfaces includes increasing a surface area of at least one of the first and second surfaces. The method further includes oxidizing the increased surface area at a temperature of at least 1000° C. and for a duration of at least 20 minutes.
Public/Granted literature
- US20150270130A1 Method for Removing Crystal Originated Particles from a Crystalline Silicon Body Public/Granted day:2015-09-24
Information query
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