- 专利标题： Masking for high temperature implants
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申请号： US14807377申请日： 2015-07-23
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公开(公告)号： US09679776B2公开(公告)日： 2017-06-13
- 发明人: Andrew M. Waite , Naushad Variam
- 申请人： Varian Semiconductor Equipment Associates, Inc.
- 申请人地址： US MA Gloucester
- 专利权人： Varian Semiconductor Equipment Associates, Inc.
- 当前专利权人： Varian Semiconductor Equipment Associates, Inc.
- 当前专利权人地址： US MA Gloucester
- 代理机构： Nields, Lemack & Frame, LLC
- 主分类号： H01L21/425
- IPC分类号： H01L21/425 ; H01L21/266 ; H01L21/02 ; H01L21/308 ; H01L21/311
摘要：
A method for the selective implantation of a workpiece is disclosed. In place of conventional photoresist, a two layer structure is used. The first layer, referred to as the protective layer, is applied directly to the workpiece and protects the workpiece from harmful etching processes. Additionally, the protective layer has limited ability to stop ions from impacting the workpiece. The second layer, referred to as the blocking layer, which is formed on a portion of the protective layer, is used to block ions from impacting the underlying workpiece. Advantageously, the blocking layer may be selectively etched without affecting the protective layer. Additionally, the protective layer can be removed without affecting the underlying workpiece. Through the use of this two layer technique, high temperature selective implants may be performed on a variety of different semiconductor devices.
公开/授权文献
- US20170025277A1 Masking For High Temperature Implants 公开/授权日：2017-01-26
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