Invention Grant
- Patent Title: Non-planar device having uniaxially strained semiconductor body and method of making same
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Application No.: US14018867Application Date: 2013-09-05
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Publication No.: US09680013B2Publication Date: 2017-06-13
- Inventor: Stephen M. Cea , Roza Kotlyar , Jack T. Kavalieros , Martin D. Giles , Tahir Ghani , Kelin J. Kuhn , Markus Kuhn , Nancy M. Zelick
- Applicant: INTEL CORPORATION
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Trop, Pruner & Hu, P.C.
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L29/78 ; H01L29/66 ; H01L29/10

Abstract:
A method and a device made according to the method. The method comprises providing a substrate including a first material, and providing a fin including a second material, the fin being disposed on the substrate and having a device active portion, the first material and the second material presenting a lattice mismatch between respective crystalline structures thereof. Providing the fin includes providing a biaxially strained film including the second material on the substrate; and removing parts of the biaxially strained film to form a substantially uniaxially strained fin therefrom.
Public/Granted literature
- US20140070273A1 Non-Planar Device Having Uniaxially Strained Semiconductor Body and Method of Making Same Public/Granted day:2014-03-13
Information query
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