Invention Grant
- Patent Title: Methods of forming dielectric layers and methods of manufacturing semiconductor devices using the same
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Application No.: US15201704Application Date: 2016-07-05
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Publication No.: US09685498B2Publication Date: 2017-06-20
- Inventor: Sang-Yeol Kang , Suk-Jin Chung , Youn-Soo Kim , Jae-Hyoung Choi , Jae-Soon Lim , Min-Young Park
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2011-0019261 20110304
- Main IPC: H01L49/02
- IPC: H01L49/02 ; H01L21/02 ; H01L21/28 ; H01L29/51 ; H01L27/108 ; H01L29/78
Abstract:
To form a dielectric layer, an organometallic precursor is adsorbed on a substrate loaded into a process chamber. The organometallic precursor includes a central metal and ligands bound to the central metal. An inactive oxidant is provided onto the substrate. The inactive oxidant is reactive with the organometallic precursor. An active oxidant is also provided onto the substrate. The active oxidant has a higher reactivity than that of the inactive oxidant.
Public/Granted literature
- US20160315137A1 METHODS OF FORMING DIELECTRIC LAYERS AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES USING THE SAME Public/Granted day:2016-10-27
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