Invention Grant
- Patent Title: Light emitting semiconductor component including an absorptive layer
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Application No.: US15034919Application Date: 2014-11-13
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Publication No.: US09685584B2Publication Date: 2017-06-20
- Inventor: Ivar Tångring , Petrus Sundgren
- Applicant: OSRAM Opto Semiconductors GmbH
- Applicant Address: DE
- Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee Address: DE
- Agency: DLA Piper LLP (US)
- Priority: DE102013112740 20131119
- International Application: PCT/EP2014/074515 WO 20141113
- International Announcement: WO2015/074950 WO 20150528
- Main IPC: H01L33/04
- IPC: H01L33/04 ; H01L33/02 ; H01L33/30 ; H01L33/44 ; H01L33/36 ; H01L33/58 ; H01L33/60 ; H01L33/62 ; H01L33/50 ; H01L33/06

Abstract:
A radiation-emitting semiconductor device includes a semiconductor body with a semiconductor layer sequence, wherein the semiconductor layer sequence has an active region that generates radiation having a peak wavelength in the near-infrared spectral range and an absorptive region, and the absorption region at least partially absorbs a shortwave radiation component having a cut-off wavelength shorter than the peak wavelength.
Public/Granted literature
- US20160284931A1 LIGHT EMITTING SEMICONDUCTOR COMPONENT INCLUDING AN ABSORPTIVE LAYER Public/Granted day:2016-09-29
Information query
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