Invention Grant
- Patent Title: Semiconductor laser device
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Application No.: US15248318Application Date: 2016-08-26
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Publication No.: US09685759B2Publication Date: 2017-06-20
- Inventor: Naoto Morizumi , Takashi Namie , Takashi Nakagawa , Daisuke Komoda , Hiroaki Shozui
- Applicant: NICHIA CORPORATION
- Applicant Address: JP Anan-shi
- Assignee: NICHIA CORPORATION
- Current Assignee: NICHIA CORPORATION
- Current Assignee Address: JP Anan-shi
- Agency: Global IP Counselors, LLP
- Priority: JP2015-169117 20150828
- Main IPC: H01S5/02
- IPC: H01S5/02 ; H01S5/022 ; H01S5/30 ; H01S5/00 ; H01S5/024 ; F21S8/10

Abstract:
A semiconductor laser device includes a base, a semiconductor laser element, a lid, a support member, a wavelength converting member, a holding member, and a buffer material. The lid has a recess formed in an upper portion of the lid, and a through-hole formed in the bottom of the recess. The support member is disposed in the recess and has a through-hole. A diameter of the through-hole of the support member is smaller than that of the through-hole of the lid. A coefficient of thermal expansion of the support member is different from that of the lid. The wavelength converting member is supported in the through-hole of the support member. The holding member is fixed to the lid and holds the support member. The buffer material is disposed in at least a part of a space between the lateral surfaces of the recess and the support member.
Public/Granted literature
- US20170063032A1 SEMICONDUCTOR LASER DEVICE Public/Granted day:2017-03-02
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