Non-volatile memory devices and controllers
Abstract:
For single-level cell flash memories and multi-level cell flash memories, different operations can be performed according to their stability when an abnormal status is terminated. Specifically, for the multi-level cell flash memories, when the abnormal status is terminated, a now physical block is used to proceed with write operation, and the previous physical block(s) would not be written any more. On the contrary, for the single-level cell flash memories, when the abnormal status is terminated, the controller needs to perform corresponding operations on the last physical page of the previous physical block(s).
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