Invention Grant
- Patent Title: Non-volatile memory devices and controllers
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Application No.: US14614447Application Date: 2015-02-05
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Publication No.: US09690661B2Publication Date: 2017-06-27
- Inventor: Kuan-Yu Ke
- Applicant: Silicon Motion, Inc.
- Applicant Address: TW Jhubei, Hsinchu County
- Assignee: SILICON MOTION, INC.
- Current Assignee: SILICON MOTION, INC.
- Current Assignee Address: TW Jhubei, Hsinchu County
- Agency: McClure, Qualey & Rodack, LLP
- Priority: TW103135329A 20141013
- Main IPC: G06F11/00
- IPC: G06F11/00 ; G06F11/14 ; G06F13/00 ; G11C11/56 ; G11C16/34 ; G11C29/42 ; G11C29/52

Abstract:
For single-level cell flash memories and multi-level cell flash memories, different operations can be performed according to their stability when an abnormal status is terminated. Specifically, for the multi-level cell flash memories, when the abnormal status is terminated, a now physical block is used to proceed with write operation, and the previous physical block(s) would not be written any more. On the contrary, for the single-level cell flash memories, when the abnormal status is terminated, the controller needs to perform corresponding operations on the last physical page of the previous physical block(s).
Public/Granted literature
- US20160103730A1 NON-VOLATILE MEMORY DEVICES AND CONTROLLERS Public/Granted day:2016-04-14
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