Invention Grant
- Patent Title: Photolithographic methods
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Application No.: US14588396Application Date: 2014-12-31
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Publication No.: US09703200B2Publication Date: 2017-07-11
- Inventor: Jong Keun Park , Christopher Nam Lee , Cecily Andes , Choong-Bong Lee
- Applicant: Rohm and Haas Electronic Materials LLC
- Applicant Address: US MA Marlborough
- Assignee: Rohm and Haas Electronic Materials LLC
- Current Assignee: Rohm and Haas Electronic Materials LLC
- Current Assignee Address: US MA Marlborough
- Agent Jonathan D. Baskin
- Main IPC: G03F7/38
- IPC: G03F7/38 ; G03F7/11 ; G03F7/039 ; G03F7/20 ; G03F7/30

Abstract:
Methods of forming an electronic device, comprising in sequence: (a) providing a semiconductor substrate comprising one or more layers to be patterned; (b) forming a photoresist layer over the one or more layers to be patterned, wherein the photoresist layer is formed from a composition that comprises: a matrix polymer comprising a unit having an acid labile group; a photoacid generator; and an organic solvent; (c) coating a photoresist overcoat composition over the photoresist layer, wherein the overcoat composition comprises a quenching polymer and an organic solvent, wherein the quenching polymer comprises a unit having a basic moiety effective to neutralize acid generated by the photoacid generator in a surface region of photoresist layer; (d) exposing the photoresist layer to activating radiation; (e) heating the substrate in a post-exposure bake process; and (f) developing the exposed film with an organic solvent developer. The methods have particular applicability in the semiconductor manufacturing industry.
Public/Granted literature
- US20150185615A1 PHOTOLITHOGRAPHIC METHODS Public/Granted day:2015-07-02
Information query
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