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    Photolithographic methods
    1.
    发明授权
    Photolithographic methods 有权

    公开(公告)号：US09703200B2

    公开(公告)日：2017-07-11

    申请号：US14588396

    申请日：2014-12-31

    申请人： Rohm and Haas Electronic Materials LLC

    发明人： Jong Keun Park ,  Christopher Nam Lee ,  Cecily Andes ,  Choong-Bong Lee

    IPC分类号： G03F7/38 ,  G03F7/11 ,  G03F7/039 ,  G03F7/20 ,  G03F7/30

    CPC分类号： G03F7/38 ,  G03F7/0045 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/2041 ,  G03F7/30

    摘要： Methods of forming an electronic device, comprising in sequence: (a) providing a semiconductor substrate comprising one or more layers to be patterned; (b) forming a photoresist layer over the one or more layers to be patterned, wherein the photoresist layer is formed from a composition that comprises: a matrix polymer comprising a unit having an acid labile group; a photoacid generator; and an organic solvent; (c) coating a photoresist overcoat composition over the photoresist layer, wherein the overcoat composition comprises a quenching polymer and an organic solvent, wherein the quenching polymer comprises a unit having a basic moiety effective to neutralize acid generated by the photoacid generator in a surface region of photoresist layer; (d) exposing the photoresist layer to activating radiation; (e) heating the substrate in a post-exposure bake process; and (f) developing the exposed film with an organic solvent developer. The methods have particular applicability in the semiconductor manufacturing industry.

    Photoresist compositions and methods of forming photolithographic patterns
    4.
    发明授权
    Photoresist compositions and methods of forming photolithographic patterns 有权
    光刻胶组合物和形成光刻图案的方法

    公开(公告)号：US09158198B2

    公开(公告)日：2015-10-13

    申请号：US13956100

    申请日：2013-07-31

    申请人： Rohm and Haas Electronic Materials LLC

    发明人： Jong Keun Park ,  Christopher Nam Lee ,  Cecily Andes ,  Deyan Wang

    IPC分类号： G03F7/004 ,  G03F7/20 ,  G03F7/038 ,  G03F7/039

    CPC分类号： G03F7/038 ,  G03F7/004 ,  G03F7/0392 ,  G03F7/20 ,  G03F7/2041 ,  G03F7/30

    摘要： Provided are photoresist compositions useful in forming photolithographic patterns by a negative tone development process. Also provided are methods of forming photolithographic patterns by a negative tone development process and substrates coated with the photoresist compositions. The photoresist compositions include one or more polymer additive that contains a basic moiety and which is substantially non-miscible with a resin component of the resist. The compositions, methods and coated substrates find particular applicability in the manufacture of semiconductor devices.

    摘要翻译： 提供了通过负色调显影方法形成光刻图案的光致抗蚀剂组合物。 还提供了通过负色调显影方法形成光刻图案的方法和涂覆有光致抗蚀剂组合物的基材。 光致抗蚀剂组合物包括一种或多种包含碱性部分并且与抗蚀剂的树脂组分基本上不可混溶的聚合物添加剂。 组合物，方法和涂覆的基材在半导体器件的制造中具有特别的适用性。