Invention Grant
- Patent Title: Method of manufacturing semiconductor device
-
Application No.: US15133032Application Date: 2016-04-19
-
Publication No.: US09704844B2Publication Date: 2017-07-11
- Inventor: Katsuhiko Funatsu , Tomoaki Uno , Toru Ueguri , Yukihiro Sato
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Tokyo
- Agency: Shapiro, Gabor and Rosenberger, PLLC
- Priority: JP2012-212494 20120926
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H01L25/00 ; H01L21/56 ; H01L21/48 ; H01L23/00 ; H01L23/31 ; H01L21/683 ; H01L21/78 ; H01L25/18

Abstract:
To improve the reliability in applying a tape to the rear surface of a substrate while securing the heat resistance of the tape applied to the rear surface of the substrate. There is a gap between a bottom surface of a ditch provided in a support member and an upper surface of a driver IC chip. On the other hand, the upper surface side of a lead frame is supported by the support member so that the bottom surface of the ditch contacts the upper surface of a Low-MOS clip mounted over a Low-MOS chip. Thus, even in a state where the driver IC chip and the Low-MOS chip are mounted on the upper surface side of the lead frame, the tape can be reliably applied to the rear surface of the lead frame (in particular, to the rear surface of the product region).
Public/Granted literature
- US20160233204A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2016-08-11
Information query
IPC分类: