Invention Grant
- Patent Title: Semiconductor device
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Application No.: US14812028Application Date: 2015-07-29
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Publication No.: US09705004B2Publication Date: 2017-07-11
- Inventor: Yoshiyuki Kobayashi , Shinpei Matsuda , Daisuke Matsubayashi , Hiroyuki Tomisu
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2014-158032 20140801
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/04 ; H01L29/786 ; G02F1/1368 ; H01L21/822 ; H01L27/06
Abstract:
A transistor whose channel is formed in a semiconductor having dielectric anisotropy is provided. A transistor having a small subthreshold swing value is provided. A transistor having normally-off electrical characteristics is provided. A transistor having a low leakage current in an off state is provided. A semiconductor device includes an insulator, a semiconductor, and a conductor. In the semiconductor device, the semiconductor includes a region overlapping with the conductor with the insulator positioned therebetween, and a dielectric constant of the region in a direction perpendicular to a top surface of the region is higher than a dielectric constant of the region in a direction parallel to the top surface.
Public/Granted literature
- US20160035897A1 SEMICONDUCTOR DEVICE Public/Granted day:2016-02-04
Information query
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