公开(公告)号：US09705004B2

公开(公告)日：2017-07-11

申请号：US14812028

申请日：2015-07-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yoshiyuki Kobayashi ,  Shinpei Matsuda ,  Daisuke Matsubayashi ,  Hiroyuki Tomisu

IPC: H01L29/78 ,  H01L29/04 ,  H01L29/786 ,  G02F1/1368 ,  H01L21/822 ,  H01L27/06

CPC classification number: H01L29/7869 ,  G02F1/1368 ,  G02F2201/58 ,  H01L21/8221 ,  H01L27/0688 ,  H01L29/045 ,  H01L29/78696

Abstract: A transistor whose channel is formed in a semiconductor having dielectric anisotropy is provided. A transistor having a small subthreshold swing value is provided. A transistor having normally-off electrical characteristics is provided. A transistor having a low leakage current in an off state is provided. A semiconductor device includes an insulator, a semiconductor, and a conductor. In the semiconductor device, the semiconductor includes a region overlapping with the conductor with the insulator positioned therebetween, and a dielectric constant of the region in a direction perpendicular to a top surface of the region is higher than a dielectric constant of the region in a direction parallel to the top surface.

公开(公告)号：US10134911B2

公开(公告)日：2018-11-20

申请号：US15644940

申请日：2017-07-10

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yoshiyuki Kobayashi ,  Shinpei Matsuda ,  Daisuke Matsubayashi ,  Hiroyuki Tomisu

IPC: H01L29/786 ,  G02F1/1368 ,  H01L21/822 ,  H01L27/06 ,  H01L29/04

Abstract: A transistor whose channel is formed in a semiconductor having dielectric anisotropy is provided. A transistor having a small subthreshold swing value is provided. A transistor having normally-off electrical characteristics is provided. A transistor having a low leakage current in an off state is provided. A semiconductor device includes an insulator, a semiconductor, and a conductor. In the semiconductor device, the semiconductor includes a region overlapping with the conductor with the insulator positioned therebetween, and a dielectric constant of the region in a direction perpendicular to a top surface of the region is higher than a dielectric constant of the region in a direction parallel to the top surface.