Invention Grant
- Patent Title: Method for producing a laser diode, mount and laser diode
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Application No.: US14424688Application Date: 2013-08-27
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Publication No.: US09705057B2Publication Date: 2017-07-11
- Inventor: Roland Enzmann , Stephan Haneder , Tomasz Swietlik , Christoph Walter , Andreas Rozynski , Markus Graul , Karsten Auen , Jürgen Dachs
- Applicant: OSRAM Opto Semiconductors GmbH
- Applicant Address: DE Regensberg
- Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee Address: DE Regensberg
- Agency: Slater Matsil, LLP
- Priority: DE102012215265 20120828
- International Application: PCT/EP2013/067679 WO 20130827
- International Announcement: WO2014/033106 WO 20140306
- Main IPC: H01S5/022
- IPC: H01S5/022 ; H01L33/60 ; H01S5/028 ; H01L33/00 ; H01L33/48 ; H01L33/62 ; H01S5/02

Abstract:
In a method for producing a laser diode, a number of laser diodes are produced on a wafer. The wafer is broken down into wafer pieces, each wafer piece having a plurality of laser diodes being arranged side by side. One wafer piece is inserted into a first mount that includes a first covering element overlapping a front face of the wafer piece and shadowing a bottom area of the front face of the wafer piece. A minor layer is deposited on an unshadowed upper area of the wafer piece's front face. The wafer piece is inserted into a second mount, which includes a second covering element that shadows the minor layer of the upper area of the front face. An electrically conductive contact layer is deposited on an unshadowed bottom area of the wafer piece's front face. The wafer piece is subsequently broken down into individual laser diodes.
Public/Granted literature
- US20150228871A1 Method for Producing a Laser Diode, Mount and Laser Diode Public/Granted day:2015-08-13
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