- 专利标题： Structure to make supercapacitor
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申请号： US13711531申请日： 2012-12-11
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公开(公告)号： US09711284B2公开(公告)日： 2017-07-18
- 发明人: Brian S. Doyle , Sasikanth Manipatruni , Shawna M. Liff , Vivek K. Singh
- 申请人： Brian S. Doyle , Sasikanth Manipatruni , Shawna M. Liff , Vivek K. Singh
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Blakely, Sokoloff, Taylor & Zafman LLP
- 主分类号： H01G4/16
- IPC分类号： H01G4/16 ; H01G4/30 ; H01G4/28 ; H01L29/06 ; H01G4/008 ; B82Y10/00 ; H01L49/02 ; D03D1/00 ; H01L29/775
摘要：
A charge storage fiber is described. In an embodiment, the charge storage fiber includes a flexible electrically conducting fiber, a dielectric coating on the flexible electrically conducting fiber, and a metal coating on the dielectric coating. In an embodiment, the charge storage fiber is attached to a textile-based product.
公开/授权文献
- US20140160628A1 STRUCTURE TO MAKE SUPERCAPACITOR 公开/授权日：2014-06-12