摘要:
A charge storage fiber is described. In an embodiment, the charge storage fiber includes a flexible electrically conducting fiber, a dielectric coating on the flexible electrically conducting fiber, and a metal coating on the dielectric coating. In an embodiment, the charge storage fiber is attached to a textile-based product.
摘要:
Flexible electronically functional fibers are described that allow for the placement of electronic functionality in traditional fabrics. The fibers can be interwoven with natural fibers to produce electrically functional fabrics and devices that can retain their original appearance.
摘要:
Flexible electronically functional fabrics are described that allow for the placement of electronic functionality in flexible substrates such as traditional fabrics. The fabrics can be made using flexible electronically functional fibers or a combination of electronically functional fibers and textile fibers. Electronic devices can be incorporated into the fabric to give it full computing capabilities.
摘要:
A charge storage fiber is described. In an embodiment, the charge storage fiber includes a flexible electrically conducting fiber, a dielectric coating on the flexible electrically conducting fiber, and a metal coating on the dielectric coating. In an embodiment, the charge storage fiber is attached to a textile-based product.
摘要:
Material layer stack structures to provide a magnetic tunnel junction (MTJ) having improved perpendicular magnetic anisotropy (PMA) characteristics. In an embodiment, a free magnetic layer of the material layer stack is disposed between a tunnel barrier layer and a cap layer of magnesium oxide (Mg). The free magnetic layer includes a Cobalt-Iron-Boron (CoFeB) body substantially comprised of a combination of Cobalt atoms, Iron atoms and Boron atoms. A first Boron mass fraction of the CoFeB body is equal to or more than 25% (e.g., equal to or more than 27%) in a first region which adjoins an interface of the free magnetic layer with the tunnel barrier layer. In another embodiment, the first Boron mass fraction is more than a second Boron mass fraction in a second region of the CoFeB body which adjoins an interface of the free magnetic layer with the cap layer.
摘要:
Memory cells with improved tunneling magnetoresistance ratio (TMR) are disclosed. In some embodiments such devices may include a magnetoresistive tunnel junction (MTJ) element coupled in series with a tunneling magnetoresistance enhancement element (TMRE). The MTJ element and TMRE may each be configured to transition between high and low resistance states, e.g., in response to a voltage. In some embodiments, the MTJ and TMRE are configure such that when a read voltage is applied to the cell while the MTJ is in its low resistance state the TMRE is driven to is low resistance state, and when such voltage is applied while the MTJ is in its high resistance state, the TMRE remains in its high resistance state. Devices and systems including such memory cells are also disclosed.
摘要:
Low voltage embedded memory having conductive oxide and electrode stacks is described. For example, a material layer stack for a memory element includes a first conductive electrode. A conductive oxide layer is disposed on the first conductive electrode. The conductive oxide layer has a plurality of oxygen vacancies therein. A second electrode is disposed on the conductive oxide layer.
摘要:
Conductive oxide random access memory (CORAM) cells and methods of fabricating CORAM cells are described. For example, a material layer stack for a memory element includes a first conductive electrode. An insulating layer is disposed on the first conductive oxide and has an opening with sidewalls therein that exposes a portion of the first conductive electrode. A conductive oxide layer is disposed in the opening, on the first conductive electrode and along the sidewalls of the opening. A second electrode is disposed in the opening, on the conductive oxide layer.
摘要:
Low voltage embedded memory having conductive oxide and electrode stacks is described. For example, a material layer stack for a memory element includes a first conductive electrode. A conductive oxide layer is disposed on the first conductive electrode. The conductive oxide layer has a plurality of oxygen vacancies therein. A second electrode is disposed on the conductive oxide layer.
摘要:
Spin transfer torque memory (STTM) devices incorporating a field plate for application of an electric field to reduce a critical current required for transfer torque induced magnetization switching. Embodiments utilize not only current-induced magnetic filed or spin transfer torque, but also electric field induced manipulation of magnetic dipole orientation to set states in a magnetic device element (e.g., to write to a memory element). An electric field generated by a voltage differential between an MTJ electrode and the field plate applies an electric field to a free magnetic layer of a magnetic tunneling junction (MTJ) to modulate one or more magnetic properties over at least a portion of the free magnetic layer.