- 专利标题： Overlay marks, methods of forming the same, and methods of fabricating semiconductor devices using the same
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申请号： US14810621申请日： 2015-07-28
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公开(公告)号： US09711395B2公开(公告)日： 2017-07-18
- 发明人: Jong-Su Kim , Dong-Woon Park , Tae-Hoi Park , Yong-Kug Bae , Tae-Hwan Oh , Chang-Hoon Lee , Boo-Hyun Ham
- 申请人： Jong-Su Kim , Dong-Woon Park , Tae-Hoi Park , Yong-Kug Bae , Tae-Hwan Oh , Chang-Hoon Lee , Boo-Hyun Ham
- 申请人地址： KR
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR
- 代理机构： Myers Bigel, P.A.
- 优先权： KR10-2014-0097588 20140730
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; H01L21/8234 ; H01L21/311 ; H01L27/02 ; G03F7/20 ; H01L21/285
摘要：
In a method of fabricating a semiconductor device, a substrate including a circuit area and an overlay mark area is provided. Conductive gate patterns are formed on the substrate in the circuit area such that the overlay mark area is free of the gate patterns, and conductive contact patterns are formed on the substrate between the gate patterns in the circuit area. A mirror pattern is formed on the substrate in the overlay mark area, where the mirror pattern and the contact patterns comprising a same reflective material. Related semiconductor devices, overlay marks, and fabrication methods are also discussed.