- 专利标题： Wide bandgap high-density semiconductor switching device and manufacturing process thereof
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申请号： US14735679申请日： 2015-06-10
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公开(公告)号： US09711599B2公开(公告)日： 2017-07-18
- 发明人: Mario Giuseppe Saggio , Simone Rascuna , Fabrizio Roccaforte
- 申请人： STMICROELECTRONICS S.R.L.
- 申请人地址： IT Agrate Brianza
- 专利权人： STMICROELECTRONICS S.R.L.
- 当前专利权人： STMICROELECTRONICS S.R.L.
- 当前专利权人地址： IT Agrate Brianza
- 代理机构： Seed Intellectual Property Law Group LLP
- 优先权： ITTO2014A0494 20140620
- 主分类号： H01L29/66
- IPC分类号： H01L29/66 ; H01L29/45 ; H01L29/16 ; H01L29/872 ; H01L29/417 ; H01L21/04 ; H01L29/47 ; H01L29/06 ; H01L29/861
摘要：
A switching device, such as a barrier junction Schottky diode, has a body of silicon carbide of a first conductivity type housing switching regions of a second conductivity type. The switching regions extend from a top surface of the body and delimit body surface portions between them. A contact metal layer having homogeneous chemical-physical characteristics extends on and in direct contact with the top surface of the body and forms Schottky contact metal portions with the surface portions of the body and ohmic contact metal portions with the switching regions. The contact metal layer is formed by depositing a nickel or cobalt layer on the body and carrying out a thermal treatment so that the metal reacts with the semiconductor material of the body and forms a silicide.
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