Invention Grant
- Patent Title: Use of topography to direct assembly of block copolymers in grapho-epitaxial applications
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Application No.: US15161762Application Date: 2016-05-23
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Publication No.: US09715172B2Publication Date: 2017-07-25
- Inventor: Benjamen M. Rathsack , Mark H. Somervell
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo ELectron Limited
- Current Assignee: Tokyo ELectron Limited
- Current Assignee Address: JP Tokyo
- Agency: Wood Herron & Evans LLP
- Main IPC: G03F7/004
- IPC: G03F7/004 ; G03F7/00 ; G03F7/42 ; H01L21/311 ; G03F7/16 ; G03F7/40 ; H01L21/308 ; H01L21/027 ; G03F7/09 ; H01L21/033 ; H01L21/3213
Abstract:
A method is provided for forming a patterned topography on a substrate. The substrate is provided with features formed atop that constitute an existing topography, and a template for directed self-assembly (DSA) surrounds the exposed topography. Further to the method, the template is filled with a block copolymer (BCP) to cover the exposed topography, and then the BCP is annealed within the template to drive self-assembly in alignment with the topography. Developing the annealed BCP exposes a DSA pattern immediately overlying the topography.
Public/Granted literature
- US20160268132A1 USE OF TOPOGRAPHY TO DIRECT ASSEMBLY OF BLOCK COPOLYMERS IN GRAPHO-EPITAXIAL APPLICATIONS Public/Granted day:2016-09-15
Information query
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