Invention Grant
- Patent Title: Memory with multiple write ports
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Application No.: US14581229Application Date: 2014-12-23
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Publication No.: US09721624B2Publication Date: 2017-08-01
- Inventor: Gus Yeung , Fakhruddin Ali Bohra , Mudit Bhargava , Andy Wangkun Chen , Yew Keong Chong
- Applicant: ARM Limited
- Applicant Address: GB Cambridge
- Assignee: ARM Limited
- Current Assignee: ARM Limited
- Current Assignee Address: GB Cambridge
- Agency: Pramudji Law Group PLLC
- Agent Ari Pramudji
- Main IPC: G11C7/10
- IPC: G11C7/10 ; G11C7/12 ; G11C7/22

Abstract:
A memory 2 includes a regular array of storage elements 4. A regular array of write multiplexers 8 is provided outside of the regular array of storage elements 4. The storage element pitch is matched to the write multiplexer pitch. The write multiplexers 10 support a plurality of write ports. When forming a memory design 2, a given instance of an array of write multiplexers 8 may be selected in dependence upon the desired number of write ports to support and this combined with a common form of storage element array 4.
Public/Granted literature
- US20160180896A1 MEMORY WITH MULTIPLE WRITE PORTS Public/Granted day:2016-06-23
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