Invention Grant
- Patent Title: Semiconductor memory device for improving signal integrity issue in center pad type of stacked chip structure
-
Application No.: US15207989Application Date: 2016-07-12
-
Publication No.: US09721644B2Publication Date: 2017-08-01
- Inventor: Keung Beum Kim , HyunJong Moon , Heeseok Lee , Seung-Yong Cha
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Onello & Mello LLP
- Priority: KR10-2015-0125715 20150904
- Main IPC: G11C5/02
- IPC: G11C5/02 ; G11C11/4093 ; H01L27/108 ; H01L25/065 ; G11C11/408 ; G11C11/4096
Abstract:
A semiconductor memory device includes a first memory die having a first termination resistor for an on-die termination and a second memory die having a second termination resistor for an on-die termination and formed on the first memory die. Each of the first and second memory dies has a center pad type and operates based on a multi-rank structure. When the first memory die is accessed, the second termination resistor is connected to the second memory die, and when the second memory die is accessed, the first termination resistor is connected to the first memory die.
Public/Granted literature
Information query
