Invention Grant
- Patent Title: State dependent sensing for wordline interference correction
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Application No.: US15354446Application Date: 2016-11-17
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Publication No.: US09721652B2Publication Date: 2017-08-01
- Inventor: Sarath Puthenthermadam , Deepanshu Dutta
- Applicant: SanDisk Technologies LLC
- Applicant Address: US TX Plano
- Assignee: SanDisk Technologies LLC
- Current Assignee: SanDisk Technologies LLC
- Current Assignee Address: US TX Plano
- Agency: Vierra Magen Marcus LLP
- Main IPC: G11C16/10
- IPC: G11C16/10 ; G11C11/56 ; G11C16/34 ; G11C16/04 ; G11C16/08

Abstract:
A variable compensation pass bias based on a state being sensed in non-volatile memory based is provided. Shifts in the apparent charge stored by a memory cell can occur because of coupling based on charge stored by adjacent cells. To account for the shift, compensations can be applied to an adjacent word line when reading based on the different possible conditions of an adjacent cell. The effects of coupling may be more pronounced for memory cells in lower states corresponding to lower threshold voltages. A compensation pass bias can be reduced as the state being sensed at a selected word line increases to account for the different effects. A compensation pass bias for an adjacent word line may be reduced with the application of larger read reference voltages to a selected word line. Other variations to a compensation pass bias are provided.
Public/Granted literature
- US20170140814A1 State Dependent Sensing For Wordline Interference Correction Public/Granted day:2017-05-18
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