Invention Grant
- Patent Title: Preservation of fine pitch redistribution lines
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Application No.: US14778667Application Date: 2013-06-28
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Publication No.: US09721886B2Publication Date: 2017-08-01
- Inventor: Kevin J. Lee , Hiten Kothari , Wayne M. Lytle
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Trop, Pruner & Hu, P.C.
- International Application: PCT/US2013/048775 WO 20130628
- International Announcement: WO2015/195067 WO 20151223
- Main IPC: H01L23/528
- IPC: H01L23/528 ; H01L23/532 ; H01L21/768 ; H01L23/525 ; H01L23/48

Abstract:
An embodiment includes a semiconductor apparatus comprising: a redistribution layer (RDL) including a patterned RDL line having two RDL sidewalls, the RDL comprising a material selected from the group comprising Cu and Au; protective sidewalls directly contacting the two RDL sidewalls; a seed layer including the material; and a barrier layer; wherein (a) the RDL line has a RDL line width orthogonal to and extending between the two RDL sidewalls, and (b) the seed and barrier layers each include a width parallel to and wider than the RDL line width. Other embodiments are described herein.
Public/Granted literature
- US20160181196A1 PRESERVATION OF FINE PITCH REDISTRIBUTION LINES Public/Granted day:2016-06-23
Information query
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