公开(公告)号：US09721886B2

公开(公告)日：2017-08-01

申请号：US14778667

申请日：2013-06-28

Applicant: Intel Corporation

Inventor： Kevin J. Lee ,  Hiten Kothari ,  Wayne M. Lytle

IPC: H01L23/528 ,  H01L23/532 ,  H01L21/768 ,  H01L23/525 ,  H01L23/48

CPC classification number: H01L23/528 ,  H01L21/76834 ,  H01L21/76846 ,  H01L21/76885 ,  H01L23/481 ,  H01L23/525 ,  H01L23/53238 ,  H01L2224/1182 ,  H01L2224/13565

Abstract: An embodiment includes a semiconductor apparatus comprising: a redistribution layer (RDL) including a patterned RDL line having two RDL sidewalls, the RDL comprising a material selected from the group comprising Cu and Au; protective sidewalls directly contacting the two RDL sidewalls; a seed layer including the material; and a barrier layer; wherein (a) the RDL line has a RDL line width orthogonal to and extending between the two RDL sidewalls, and (b) the seed and barrier layers each include a width parallel to and wider than the RDL line width. Other embodiments are described herein.