Invention Grant
- Patent Title: Method of manufacturing RF power amplifier module, RF power amplifier module, RF module, and base station
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Application No.: US14836301Application Date: 2015-08-26
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Publication No.: US09721902B2Publication Date: 2017-08-01
- Inventor: Wei Jiang , Yiwei Ma , Jinpei Ju , Hongmei Hu , Qin Gong
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: CN201410423542 20140826; KR10-2015-0097161 20150708
- Main IPC: H03F1/30
- IPC: H03F1/30 ; H03F3/19 ; H01L23/552 ; H01L23/057 ; H01L23/36 ; H01L23/66 ; H01L23/00

Abstract:
The present disclosure relates to a radio frequency (RF) unit of a base station, and more particularly, to a method of manufacturing an RF power amplifier module, an RF power amplifier module, an RF module, and a base station. The RF power amplifier module includes at least a power device, a power circuit board, a heat-dissipation substrate, and input/output ports. A power device die of the power device and the power circuit board are mounted on the heat-dissipation substrate. The power device die is connected to the power circuit board through packaging lead wires. In one exemplary embodiment, a heat-dissipation effect and manufacturing efficiency of the RF power amplifier module are improved and a cost of the RF power amplifier module is reduced.
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