Formation of semiconductor structures employing selective removal of fins includes, for example, providing a substrate having a first plurality of fins having first hard masks thereon, a second plurality of fins having second hard masks thereon, the first hard mask being different from the second hard mask, depositing a first fill material between lower portions of the first and second fins, depositing a third hard mask layer on the first fill material between the first and second fins, depositing a second fill material on the third hard mask extending between upper portions of the first and second fins, selectively removing the second hard masks and the second fins to form open cavities in the first and second fill material, depositing a third fill material in the opened cavities, and removing the second fill material and the third fill material above the third hard mask to form a fin-cut region.