Invention Grant
- Patent Title: Semiconductor device including fin shaped structure and method for fabricating the same
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Application No.: US14855390Application Date: 2015-09-16
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Publication No.: US09722078B2Publication Date: 2017-08-01
- Inventor: Chung-Yi Chiu , Shih-Fang Hong , Chao-Hung Lin
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Priority: TW104126243A 20150812
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/06 ; H01L29/08 ; H01L29/165 ; H01L29/161 ; H01L29/66
Abstract:
A semiconductor device and a method of fabricating the same, the semiconductor device includes a silicon substrate, a fin shaped structure and a shallow trench isolation. The fin shaped structure is disposed on the silicon substrate and includes a silicon germanium (SiGe) layer extending downwardly from a top end and at least occupying 80% to 90% of the fin shaped structure. The shallow trench isolation covers a bottom portion of the fin shaped structure.
Public/Granted literature
- US20170047447A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2017-02-16
Information query
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