发明授权
- 专利标题： I-layer vanadium-doped PIN type nuclear battery and the preparation process thereof
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申请号： US14349933申请日： 2012-05-31
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公开(公告)号： US09728292B2公开(公告)日： 2017-08-08
- 发明人: Hui Guo , Keji Zhang , Yuming Zhang , Yujuan Zhang , Chao Han , Yanqiang Shi
- 申请人： Hui Guo , Keji Zhang , Yuming Zhang , Yujuan Zhang , Chao Han , Yanqiang Shi
- 申请人地址： CN Xi'an
- 专利权人： XIDIAN UNIVERSITY
- 当前专利权人： XIDIAN UNIVERSITY
- 当前专利权人地址： CN Xi'an
- 代理机构： Swanson & Bratschun, L.L.C.
- 优先权： CN201110319001 20111019
- 国际申请： PCT/CN2012/076325 WO 20120531
- 国际公布： WO2013/056556 WO 20130425
- 主分类号： G21H1/06
- IPC分类号： G21H1/06 ; H01L29/868 ; H01L21/04 ; H01L29/66 ; H01L29/36 ; H01L29/861 ; H01L29/16 ; H01L29/167 ; H01L21/02
摘要：
A layer I vanadium-doped PIN-type nuclear battery, including from top to bottom a radioisotope source layer(1), a p-type ohm contact electrode(4), a SiO2 passivation layer(2), a SiO2 compact insulation layer(3), a p-type SiC epitaxial layer(5), an n-type SiC epitaxial layer(6), an n-type SiC substrate(7) and an n-type ohm contact electrode(8). The doping density of the p-type SiC epitaxial layer(5) is 1×1019 to 5×1019 cm−3, the doping density of the n-type SiC substrate(7) is 1×1018 to 7×1018 cm−3. The n-type SiC epitaxial layer(6) is a low-doped layer I formed by injecting vanadium ions, with the doping density thereof being 1×1013 to 5×1014 cm−3. Also provided is a preparation method for a layer I vanadium-doped PIN-type nuclear battery. The present invention solves the problem that the doping density of layer I of the exiting SiC PIN-type nuclear battery is high.
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