Invention Grant
- Patent Title: Semiconductor device and integrated inductor
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Application No.: US15017093Application Date: 2016-02-05
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Publication No.: US09728596B1Publication Date: 2017-08-08
- Inventor: Chun-Chi Chen , Kai-Wen Cheng , Cheng-Yuan Tsai , Kuo-Ming Wu
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, P.C., Intellectual Property Attorneys
- Agent Anthony King
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L23/64 ; H01L27/08 ; H01L29/30 ; H01F17/00 ; H01L49/02

Abstract:
A semiconductor structure includes a first magnetic layer, an insulative oxide layer, an oxygen trapping layer and a cap layer. The insulative oxide layer is over the first magnetic layer. The oxygen trapping layer is over the insulative oxide layer. The oxygen concentration of the oxygen trapping layer is less than an oxygen concentration of the insulative oxide layer. The cap layer is over the oxygen trapping layer.
Public/Granted literature
- US20170229532A1 SEMICONDUCTOR DEVICE AND INTEGRATED INDUCTOR Public/Granted day:2017-08-10
Information query
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