- 专利标题： Retaining strain in finFET devices
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申请号： US14932112申请日： 2015-11-04
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公开(公告)号： US09728642B2公开(公告)日： 2017-08-08
- 发明人: Bruce B. Doris , Gauri Karve , Fee Li Lie , Junli Wang
- 申请人： International Business Machines Corporation
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 代理机构： Cantor Colburn LLP
- 代理商 Vazken Alexanian
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/66 ; H01L29/10 ; H01L21/308 ; H01L29/16 ; H01L29/161
摘要：
A method for fabricating a semiconductor device comprises patterning a strained fin from a strained layer of semiconductor material arranged on a substrate, depositing a first layer of semiconductor material on the fin and exposed portions of the substrate, patterning and etching to remove a portion of the first layer of semiconductor material and a portion of the fin to expose a portion of the substrate, depositing a second layer of semiconductor material on exposed portions of the substrate and the first layer of semiconductor material, and patterning and etching to remove a portion of the second layer of semiconductor material layer and the first layer of semiconductor material to define a dummy gate stack, the dummy gate stack is operative to substantially maintain the strain in the strained fin.
公开/授权文献
- US20170125577A1 RETAINING STRAIN IN FINFET DEVICES 公开/授权日：2017-05-04
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