Invention Grant
- Patent Title: Circuit for monitoring metal degradation on integrated circuit
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Application No.: US14846813Application Date: 2015-09-06
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Publication No.: US09733302B2Publication Date: 2017-08-15
- Inventor: Zhichen Zhang , John M. Pigott , Chuanzheng Wang , Qilin Zhang , Michael J. Zunino
- Applicant: FREESCALE SEMICONDUCTOR, INC.
- Applicant Address: US TX Austin
- Assignee: NXP USA, INC.
- Current Assignee: NXP USA, INC.
- Current Assignee Address: US TX Austin
- Agent Charles E. Bergere
- Priority: CN201510063397 20150123
- Main IPC: G01R31/3187
- IPC: G01R31/3187 ; G01R31/28

Abstract:
An integrated circuit (IC) having a heat-generating element, such as a power MOSFET, a current-carrying conductor coupled to the heat-generating element, a sense conductor adjacent the current-carrying conductor, and a failure-detection circuit coupled to the sense conductor. When thermal cycling of the IC causes the resistance of the sense conductor to become greater than a temperature-dependent threshold value, the failure-detection circuit generates a signal indicating that the integrated circuit will soon fail. The resistance of the sense conductor is determined by injecting a current into the sense conductor to generate a voltage. The temperature-dependent threshold value is a voltage generated by injecting a current into a reference conductor disposed away from the current-carrying and sense conductors. A voltage comparator compares the two voltages to generate the output. Alternatively, the failure-detection circuit includes a processor that calculates the temperature-dependent threshold value from a temperature measurement taken on the integrated circuit.
Public/Granted literature
- US20160216318A1 CIRCUIT FOR MONITORING METAL DEGRADATION ON INTEGRATED CIRCUIT Public/Granted day:2016-07-28
Information query
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