- 专利标题： Alignment marks in non-STI isolation formation and methods of forming the same
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申请号： US15089856申请日： 2016-04-04
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公开(公告)号： US09741665B2公开(公告)日： 2017-08-22
- 发明人: Chun-Wei Chang , Shyh-Fann Ting , Ching-Chun Wang , Dun-Nian Yaung
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater Matsil, LLP
- 主分类号： H01L23/544
- IPC分类号： H01L23/544 ; H01L27/02 ; H01L21/308 ; H01L21/311 ; H01L21/8234 ; H01L21/027 ; H01L21/762 ; H01L21/3065 ; H01L29/06 ; H01L29/78 ; H01L29/66
摘要：
A method includes forming a photo resist over a semiconductor substrate of a wafer, patterning the photo resist to form a first opening in the photo resist, and implanting the semiconductor substrate using the photo resist as an implantation mask. An implanted region is formed in the semiconductor substrate, wherein the implanted region is overlapped by the first opening. A coating layer is coated over the photo resist, wherein the coating layer includes a first portion in the first opening, and a second portion over the photo resist. A top surface of the first portion is lower than a top surface of the second portion. The coating layer, the photo resist, and the implanted region are etched to form a second opening in the implanted region.
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